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| BAS16 Discrete POWER & Signal Technologies BAS16 CONNECTION DIAGRAM 3 3 3 A6 2 1 2 1 2 NC SOT-23 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25C unless otherwise noted Parameter Value 75 200 600 700 1.0 2.0 -50 to +150 150 Units V mA mA mA A A C C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max BAS16 350 2.8 357 Units mW mW/C C/W (c)1997 Fairchild Semiconductor Corporation BAS16 High Conductance UItra Fast Diode (continued) Electrical Characteristics Symbol BV IR TA = 25C unless otherwise noted Parameter Breakdown Voltage Reverse Current Test Conditions I R = 5.0 A VR = 25 V, TA = 150C VR = 75 V VR = 75 V, TA = 150C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 150 mA VR = 0, f = 1.0 MHz I F = 10 mA, VR = 6.0 V, I RR = 1.0 mA, RL = 100 Min 85 Max 30 1.0 50 715 855 1.0 1.25 2.0 6.0 Units V A A A mV mV V V pF nS VF Forward Voltage CO TRR Diode Capacitance Reverse Recovery Time |
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